PART |
Description |
Maker |
FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Sumitomo Electric Industries, Ltd.
|
NE850010000 NE8500199 NE8500100 |
C-BAND MEDIUM POWER GaAs MESFET
|
California Eastern Labs NEC[NEC]
|
FLL120MK |
L-band Medium & High Power GAAS Fets
|
FUJITSU Eudyna Devices Inc
|
FLU35XM |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
FLL107ME |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
FLL400IP-3 |
L-Band Medium & High Power GaAs FET
|
List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
|
FLU10ZM |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
FLU10XM |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
FLL300IL-1 FLL300IL-2 |
(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets
|
Fujitsu Microelectronics
|
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
XP1013-BD-EV1 XP1013-BD-000V XP1013-BD |
17000 MHz - 26000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 17.0-26.0 GHz GaAs MMIC Power Amplifier
|
MIMIX BROADBAND INC
|